symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 31 40 59 75 r jl 16 24 a repetitive avalanche energy 0.3mh b 60 mj w junction and storage temperature range a p d c 3 2.1 -55 to 150 t a =70c i d continuous drain current af maximum units parameter t a =25c t a =70c 30 maximum junction-to-ambient a steady-state 11.5 9.7 40 avalanche current b 20 c/w absolute maximum ratings t a =25c unless otherwise noted v v 25 pulsed drain current b power dissipation t a =25c gate-source voltage drain-source voltage maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a f t 10s r ja c/w ao4418 n-channel enhancement mode field effect transistor features v ds (v) = 30v i d = 11.5a (v gs = 20v) r ds(on) < 14m ? (v gs = 20v) r ds(on) < 17m ? (v gs = 10v) r ds(on) < 40m ? (v gs = 4.5v) uis tested! rg,ciss,coss,crss tested general description the ao4418 uses advanced trench technology to provide excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in pwm applications. standard product ao4418 is pb-free (meets rohs & sony 259 specifications). soic-8 g s s s d d d d g d s alpha & omega semiconductor, ltd. www.aosmd.com
ao4418 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1.5 2.4 3 v i d(on) 40 a 9.8 14 t j =125c 14.2 18 12.3 17 m ? 32 40 m ? g fs 14 22 s v sd 0.76 1 v i s 4.3 a c iss 758 910 pf c oss 180 pf c rss 128 180 pf r g 0.3 0.7 1.1 ? q g (10v) 16.6 20 nc q g (4.5v) 8.6 nc q gs 2.5 nc q gd 4.9 nc t d(on) 5.4 ns t r 5.1 ns t d(off) 14.4 ns t f 3.7 ns t rr 16.9 22 ns q rr 6.6 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =10v, v ds =15v, i d =11.5a total gate charge gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.3 ? , r gen =3 ? turn-off fall time total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz m ? v gs =4.5v, i d =5a i s =1a,v gs =0v v ds =5v, i d =10a v gs =10v, i d =10a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs i d =250 a v ds =30v, v gs =0v v ds =0v, v gs = 25v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =11.5a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =20v, i d =11.5a reverse transfer capacitance i f =11.5a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. f.the current rating is based on the t 10s thermal resistance rating. rev 6: july 2007 alpha & omega semiconductor, ltd. www.aosmd.com
ao4418 typical electrical and thermal characteristic s 0 5 10 15 20 25 30 35 40 45 50 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 5v 6v 10v 0 5 10 15 20 25 30 2 2.5 3 3.5 4 4.5 5 5.5 v gs (volts) figure 2: transfer characteristics i d (a) 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs =20 v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =20v 0 10 20 30 40 50 60 0 5 10 15 20 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10 v i d =10a 25 c 125c 7v i d =10a alpha & omega semiconductor, ltd. www.aosmd.com
ao4418 typical electrical and thermal characteristic s 0 2 4 6 8 10 0 4 8 12 16 20 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 1 0 m s 1m s 0 .1 s 1 s 10s d c r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =11.5a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =40c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, sin g le p ulse t j(max) =150c t a =25c 10 s alpha & omega semiconductor, ltd. www.aosmd.com
ao4418 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd ch ar ge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms tt r d(on) t on t d(of f ) t f t of f vdd vgs id vgs rg du t - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vd c dut l vds vgs vds is d isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar alpha & omega semiconductor, ltd. www.aosmd.com
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